• DocumentCode
    3556212
  • Title

    Electric field and current dependence of SiO2intrinsic breakdown

  • Author

    Modelli, A. ; Ricco, B.

  • Author_Institution
    SGS-Ates, Agrate Brianza, Italy
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    148
  • Lastpage
    151
  • Abstract
    A technique by which the oxide current and field can be varied independently is used to measure the dependence of the total injected charge at breakdown in thin SiO2films. Contrary to previous results, this is found to be a well characterized, exponential function of the applied field regardless of oxide type and thickness as well as of current injection mode. The experimental results are also briefly discussed in the light of the available models for SiO2high-field breakdown.
  • Keywords
    Charge measurement; Conducting materials; Current measurement; Design for quality; Electric breakdown; Electrodes; Energy resolution; Gold; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190665
  • Filename
    1484436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556212