DocumentCode
3556223
Title
InP high power MISFET
Author
Nagahama, K. ; Nishimura, T. ; Hayafuji, N. ; Murotani, T. ; Fujikawa, K.
Author_Institution
Mitsubishi Electric Corporation, Hyogo, Japan
Volume
30
fYear
1984
fDate
1984
Firstpage
190
Lastpage
193
Abstract
To investigate the capabilities of high frequency high power InP MISFET, the multi-finger type InP MISFETs are fabricated and their characteristics are discussed compared with those of GaAs MESFETs. Double gate-finger type InP MISFETs, whose gates are 360 µm wide, have the excellent RF output characteristics of 310 mW (0.86 W/mm) at 8 GHz with 33% power added efficiency. The 24 gate-finger type MISFETs, whose gates are 4800 µm wide, are fabricated using flip-chip bonding technique. 1.5 W output power from a chip, which is the highest value ever reported with InP MISFET, are obtained at 10 GHz with 4 dB gain.
Keywords
Bonding; Capacitance-voltage characteristics; Gallium arsenide; Indium phosphide; Insulation; MESFETs; MISFETs; Power generation; Radio frequency; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190676
Filename
1484447
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