DocumentCode :
3556226
Title :
New lateral GaAs transistor
Author :
Taira, K. ; Wada, M. ; Kato, Y. ; Dohsen, M. ; Kasahara, J. ; Arai, M. ; Watanabe, N.
Author_Institution :
Sony Corporation Research center, Yokohama
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
201
Lastpage :
204
Abstract :
A GaAs transistor with new structure and new mechanism was proposed and demonstrated, which utilizes the semi-insulating region not only as the isolation but also as the active region. It has a lateral structure, where p+region was formed between two n+regions directly into semi-insulating GaAs. p+region acts as the hole injector to form virtual base in the semi-insulating region. Bipolar operation with a current gain of 4 was obtained for the device with the geometry of 1.3 µm length of p+region between 3 µm space of two n+region. Its propagation delay time evaluated by a 15-stage ring oscillator with DCTL was 230 psec.
Keywords :
Bipolar transistors; Doping; FETs; Gallium arsenide; Geometry; Gold; Ohmic contacts; Propagation delay; Ring oscillators; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190679
Filename :
1484450
Link To Document :
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