• DocumentCode
    3556239
  • Title

    A folded capacitor cell (F.C.C.) for future megabit DRAMs

  • Author

    Wada, M. ; Hieda, K. ; Watanabe, S.

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    244
  • Lastpage
    247
  • Abstract
    A new dynamic RAM cell called Folded Capacitor Cell (F.C.C.) have been developed for use in future megabit DRAMs. With keeping the storage capacitance large enough against soft errors, the cell size is reduced by utilizing the vertical capacitor made along the isolation region. Three dimensional device simulation has been extensively carried out to characterize the interaction of neighbouring cells. The application of FCC to realize 4M bit or 16M bit DRAMs is also discussed.
  • Keywords
    Boron; Capacitance; Capacitors; DRAM chips; FCC; Fabrication; Random access memory; Read-write memory; Silicon; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190692
  • Filename
    1484463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556239