DocumentCode :
3556239
Title :
A folded capacitor cell (F.C.C.) for future megabit DRAMs
Author :
Wada, M. ; Hieda, K. ; Watanabe, S.
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
244
Lastpage :
247
Abstract :
A new dynamic RAM cell called Folded Capacitor Cell (F.C.C.) have been developed for use in future megabit DRAMs. With keeping the storage capacitance large enough against soft errors, the cell size is reduced by utilizing the vertical capacitor made along the isolation region. Three dimensional device simulation has been extensively carried out to characterize the interaction of neighbouring cells. The application of FCC to realize 4M bit or 16M bit DRAMs is also discussed.
Keywords :
Boron; Capacitance; Capacitors; DRAM chips; FCC; Fabrication; Random access memory; Read-write memory; Silicon; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190692
Filename :
1484463
Link To Document :
بازگشت