• DocumentCode
    3556256
  • Title

    Submicron CCD memory structures fabricated by electron-beam lithography

  • Author

    Slotboom, J.W. ; Bartsen, J.W. ; Dil, J.G. ; Pelgrom, M.J.M. ; De Klerk, J. M J ; Verhaar, R.D.J. ; Juffermans, C.A.H. ; Vinton, D.J. ; Swetman, J.P.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, The Netherlands
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    308
  • Lastpage
    311
  • Abstract
    We present experimental data of the first Charge-Coupled Device (CCD) fabricated in a single-level polysilicon process with sub micron gates separated by submicron gaps. Both electron-beam and optical lithography is used. Further it will be shown that using this technology and fully exploiting the basic simplicity of the CCD-concept, memory structures can be made with extremely high bit densities with 2 to 5 µm2cells.
  • Keywords
    Aluminum; Boron; Charge coupled devices; Charge transfer; Electrodes; Etching; Laboratories; Lithography; Optical sensors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190709
  • Filename
    1484480
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556256