Title :
Submicron CCD memory structures fabricated by electron-beam lithography
Author :
Slotboom, J.W. ; Bartsen, J.W. ; Dil, J.G. ; Pelgrom, M.J.M. ; De Klerk, J. M J ; Verhaar, R.D.J. ; Juffermans, C.A.H. ; Vinton, D.J. ; Swetman, J.P.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Abstract :
We present experimental data of the first Charge-Coupled Device (CCD) fabricated in a single-level polysilicon process with sub micron gates separated by submicron gaps. Both electron-beam and optical lithography is used. Further it will be shown that using this technology and fully exploiting the basic simplicity of the CCD-concept, memory structures can be made with extremely high bit densities with 2 to 5 µm2cells.
Keywords :
Aluminum; Boron; Charge coupled devices; Charge transfer; Electrodes; Etching; Laboratories; Lithography; Optical sensors; Silicon;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190709
