• DocumentCode
    3556265
  • Title

    Material and device considerations for HEMT LSI

  • Author

    Shibatomi, A. ; Saito, J. ; Abe, M. ; Mimura, T. ; Nishiuchi, K. ; Kobayashi, M.

  • Author_Institution
    Fujitsu Limited, Atsugi, Japan
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    340
  • Lastpage
    343
  • Abstract
    MBE growth and fabrication process technologies for realizing high performance and high yield HEMT LSI circuits are described. The mobility was as high as 2.4×106cm2/V.s at 4.2K. The high uniform epitaxial layer has been grown on 3"φwafer with low surface defect density. The effect of (DX) center in AlGaAs layer has been reduced by using new heterostructure. Threshold voltage (Vth) has been well controlled and uniform over the wafer and wafer to wafer. Ion implantation technology has been applied for the purpose of the isolation and reduction of series resistance. These high performance technologies make the HEMT very suitable for LSI application.
  • Keywords
    Circuits; Epitaxial layers; Fabrication; HEMTs; Isolation technology; Large scale integration; Molecular beam epitaxial growth; Surface resistance; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190718
  • Filename
    1484489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556265