Monolithic intrinsic NMOS HgCdTe IRCCDs with on-chip signal processing

NMOS monolithic intrinsic infrared charge coupled devices (IRCCDs) fabricated on epitaxial layers of Hg1-xCdxTe (x = 0.37) have been demonstrated. The arrays are fifty-five bit, four-phase surface channel devices with fifty front side illuminated MOS IR photodetectors. The devices have integrated reset floating diffusion amplifiers for performing true "on-chip" monolithic signal processing. Silicon dioxide and thermally deposited metals are used to form the insulators and gates. Shift registers have demonstrated charge transfer efficiencies greater than 0.9995. Multiplexed arrays have achived detectivities approaching 5 × 1012 cm-Hz^1/2-W^-1. The operational and detector radiometric data are presented and discussed.