• DocumentCode
    3556275
  • Title

    Development of an improved 16 × 64 InSb CID array

  • Author

    Wei, C.Y. ; Woodbury, H.H. ; Wang, S.C.-H.

  • Author_Institution
    General Electric Corporate Research and Development, Schenectady, NY
  • fYear
    1984
  • fDate
    9-12 Dec. 1984
  • Firstpage
    378
  • Lastpage
    381
  • Abstract
    In this paper, we describe a 16 × 64 InSb CID array using a concentric gate structure and planar process designed for scanning TDI applications. Excellent dual-gate coupling and charge transfer demonstrate, for the first time, the feasibility of the ideal mode operation. Preliminary array performance data were obtained using the sequential row inject readout scheme in its simplest form.
  • Keywords
    Capacitance; Charge transfer; Design optimization; Potential well; Sampling methods; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190728
  • Filename
    1484499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556275