Deep-submicron MOSFET characteristics with 5 nm gate oxide

0.1-10.0 µm channel MOSFETs and 0.3-1.7 µm channel E/E ring oscillators, both with 5 nm gate oxide, are fabricated using n-channel silicon gate technology with the EB direct writing technique to clarify their applicability to LSIs. The 0.28 µm channel MOSFET shows excellent long-channell behavior with high voltage gain in addition to high transconductance of 260 mS/mm and high drain breakdown voltage more than 5 V. The 0.3 µm channel ring oscillator shows a gate delay of 50 ps and small susceptibility to the influence of wiring capacitance.