Title :
Bloch oscillations in an InGaAsP/InGaAsP superlattice
Author :
Cho, G.C. ; Dekorsy, T. ; Bakker, H.J. ; Roskos, H. ; Kurz, H. ; Kohl, A. ; Opitz, B.
Author_Institution :
Inst. fur Halbleitertechnik II, Tech. Hochschule Aachen, Germany
Abstract :
Summary form only given. Here we report on the first observation of Bloch oscillations in strain-balanced InGaAsP-InGaAsP grown by low-pressure metal-organic vapor-phase epitaxy (LP-MOVPE) on (001) oriented n-InP substrate. This InP-based strained heterostructure is of technological relevance since it allows the realization of polarization-insensitive optical modulators at 1.55 /spl mu/m for optical fiber based communication systems. We present a high-sensitivity method for the observation of BO in this material system based on the detection of time-resolved transmission changes, which also allows one to separate the interband from the intraband dynamics of the optically excited system.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; oscillations; semiconductor growth; semiconductor superlattices; substrates; vapour phase epitaxial growth; 1.55 mum; Bloch oscillations; InGaAsP-InGaAsP; InGaAsP/InGaAsP superlattice; InP; InP-based strained heterostructure; LP-MOVPE; high-sensitivity method; interband dynamics; intraband dynamics; low-pressure metal-organic vapor-phase epitaxy; n-InP substrate; optical fiber based communication system; optically excited system; polarization-insensitive optical modulators; strain-balanced; time-resolved transmission changes; Fiber nonlinear optics; Gallium arsenide; Nonlinear optics; Optical materials; Optical mixing; Optical modulation; Optical superlattices; Semiconductor superlattices; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
