DocumentCode :
3556294
Title :
VHF High power VD2MOSFET
Author :
Yoshida, Hiroshi ; Shibata, Yasuo ; Usunaga, Yukiyasu
Author_Institution :
NEC Corporation, Kawasaki, Japan
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
451
Lastpage :
454
Abstract :
A new VHF power device with a Vertical Double diffused Dual gate MOSFET structure has been developed. This VD2MOSFET shows the maximum output power of 65W with a power gain of 12 dB at 100MHz. The gain controllability expressed by DeltaP_{out}/DeltaV_{cg} is a constant at 5W/V over a V_{cg} range of 4-14V. By using this controllability , the gain of a VHF power amplifier is expected to be stabilized with a simple feedback.
Keywords :
Aluminum; Controllability; FETs; Fabrication; Frequency; MOSFET circuits; Packaging; Power MOSFET; Power amplifiers; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190748
Filename :
1484519
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556294
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