DocumentCode :
3556296
Title :
Technology requirements for mega bit CMOS EPROMs
Author :
Yoshikawa, Kuniyoshi ; Sato, Maski ; Mori, Seiichi ; Mikata, Yu-ichi ; Yanase, Toshinoby ; Kanzaki, K. ; Nozawa, Hiroshi
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
456
Lastpage :
459
Abstract :
New technologies inherent to EPROM structure have been developed and discussed for realizing mega bit CMOS EPROMs. We have introduced three key technologies: (i) DI2DSA structure for high speed write/read characteristics, (ii) oxide film by argon diluted oxygen oxidation and/or polyoxide/nitride/oxide structures for thin reliable 2nd gate insulator, (iii) masked LDD structure for hot carrier resistance and high breakdown voltage. These technologies are considered to be promising for future advanced EPROMs.
Keywords :
Boron; CMOS technology; EPROM; Hot carriers; Impurities; Insulation; Integrated circuit technology; Nonvolatile memory; Testing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190750
Filename :
1484521
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556296
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