• DocumentCode
    3556296
  • Title

    Technology requirements for mega bit CMOS EPROMs

  • Author

    Yoshikawa, Kuniyoshi ; Sato, Maski ; Mori, Seiichi ; Mikata, Yu-ichi ; Yanase, Toshinoby ; Kanzaki, K. ; Nozawa, Hiroshi

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    456
  • Lastpage
    459
  • Abstract
    New technologies inherent to EPROM structure have been developed and discussed for realizing mega bit CMOS EPROMs. We have introduced three key technologies: (i) DI2DSA structure for high speed write/read characteristics, (ii) oxide film by argon diluted oxygen oxidation and/or polyoxide/nitride/oxide structures for thin reliable 2nd gate insulator, (iii) masked LDD structure for hot carrier resistance and high breakdown voltage. These technologies are considered to be promising for future advanced EPROMs.
  • Keywords
    Boron; CMOS technology; EPROM; Hot carriers; Impurities; Insulation; Integrated circuit technology; Nonvolatile memory; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190750
  • Filename
    1484521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556296