• DocumentCode
    355633
  • Title

    Transient self bending of laser beam in biased photorefractive Bi/sub 12/TiO/sub 20/ crystal

  • Author

    Marquez Aguilar, P.A. ; Sanchez-Mondragon, Jose Javier ; Stepanov, S. ; Vysloukh, V.

  • Author_Institution
    INAOE, Puebla, Mexico
  • fYear
    1996
  • fDate
    7-7 June 1996
  • Firstpage
    211
  • Abstract
    Summary form only given. Here we report, to our knowledge for the first time, the transient self-bending of the laser beam in photorefractive crystal (PRC) biased by the external DC electric field. The effect is ensured by the dynamic shift of the photocarrier distribution from the beam area under the influence of the driving electric field. As a result, at the beginning of illumination (but not in steady-state) the photoinduced photorefractive lens is formed not in the center of the beam and the latter experiences some bending via this lens.
  • Keywords
    bismuth compounds; laser beams; photorefractive materials; Bi/sub 12/TiO/sub 20/; dynamic shift; external DC electric field bias; laser beam; photocarrier distribution; photoinduced lens; photorefractive crystal; transient self bending; Bismuth; Breakdown voltage; Crystals; Laser beams; Lenses; Lighting; Numerical simulation; Partial response channels; Photorefractive materials; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
  • Conference_Location
    Anaheim, CA, USA
  • Print_ISBN
    1-55752-444-0
  • Type

    conf

  • Filename
    865787