• DocumentCode
    3556347
  • Title

    Elevated source/drain MOSFET

  • Author

    Wong, S.S. ; Bradbury, D.R. ; Chen, D.C. ; Chiu, K.Y.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, California
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    634
  • Lastpage
    637
  • Abstract
    The fabrication of both n- and p-channel MOSFET´s with the souce/drain regions elevated above the electrical channel is described. The realization of effective shallow junctions is demonstrated and the device properties are compared to those of conventional MOSFET´s.
  • Keywords
    Boron; Electrostatic discharge; Epitaxial growth; Etching; Fabrication; Implants; Leakage current; MOSFET circuits; Silicides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190802
  • Filename
    1484573
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556347