• DocumentCode
    3556362
  • Title

    A 2 micron high performance bipolar 64K ECL static RAM technology with 200 square microns contactless memory cell

  • Author

    Vora, M. ; Chien, F. ; Burton, G. ; Koh, Y.B. ; Brown, R. ; Herndon, W. ; Heald, R.

  • Author_Institution
    Fairchild Research Center, Palo Alto, CA
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    690
  • Lastpage
    693
  • Abstract
    Small semiconductor memories with READ/ WRITE times of less than 15 ns have typically been bipolar ECL devices. The densest such chip possible with a state-of-the art process such as 2 micron Isoplanar has been a 16K ECL RAM with a cell size of 600 to 800 square microns (Ref. 1). In order to make a practical 64K ECL RAM with 2 micron layout rules, cell size has to be less than 200 square microns. This new technology has been developed which meets the memory cell size requirement while maintaining performance.
  • Keywords
    Anodes; Planarization; Random access memory; Read-write memory; Resistors; Semiconductor diodes; Silicides; Strips; Surface topography; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190817
  • Filename
    1484588