• DocumentCode
    3556379
  • Title

    A silicon bipolar transistor with a hydrogenated amorphous emitter

  • Author

    Ghannam, M. ; Nijs, J. ; Mertens, R. ; DeKeersmaecker, R.

  • Author_Institution
    Interuniversity Microelectronics Center, Heverlee, Belgium
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    746
  • Lastpage
    748
  • Abstract
    THE FIRST operating heterojunction bipolar transistor using a wide band gap phosphorus doped hydrogenated amorphous silicon emitter has been realized. The maximum common emitter current gain has a value of 14 while the base Gummel number amounts to 1.35 × 1013s/cm4.
  • Keywords
    Amorphous materials; Amorphous silicon; Bipolar transistors; Hydrogen; Laboratories; Photonic band gap; Plasma temperature; Radio frequency; Resistors; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190833
  • Filename
    1484604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556379