DocumentCode
3556385
Title
State-of-the-art of MOS modeling
Author
Schütz, A. ; Werner, C.
Author_Institution
Siemens AG, F.R. Germany
Volume
30
fYear
1984
fDate
1984
Firstpage
766
Lastpage
769
Abstract
In this paper we survey the field of modern MOS-modeling. Methods, problems and benefits are discussed. Several kinds of approaches are presented and error mechanisms are outlined. Finally, some recent development based on the MINIMOS program will be sketched.
Keywords
Analytical models; Circuit analysis computing; Circuit simulation; Computational efficiency; Electrons; Laboratories; Poisson equations; Predictive models; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190839
Filename
1484610
Link To Document