Optimization of lightly doped drain MOSFETs using a new quasiballistic simulation tool

In this work an improved simulation tool is described, which cares for non-local and dark space effects in the impact ionization process. The model has been used to simulate lightly doped drain MOSFETs. Simulation results are given for a variety of the length, the implantation dose and the element used in the lightly doped drain region. The breakdown properties as well as the series resistance are calculated and the implications for voltage proof short-channel devices are discussed.