• DocumentCode
    3556392
  • Title

    3-D SOI/CMOS

  • Author

    Nakano, Motoo

  • Author_Institution
    Fujitsu Limited, Kawasaki, Japan
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    792
  • Lastpage
    795
  • Abstract
    Three-dimensional (3-D) SOI/CMOS has been expected to be a novel structure which offers the possibilities of high packing density and high speed function. This paper summarizes some of the properties of 3-D SOI/CMOS such as fabricating processes, characteristics and practical structures.
  • Keywords
    CMOS integrated circuits; CMOS process; Crystallization; Heating; High speed integrated circuits; Impurities; Insulation; Silicon on insulator technology; Strips; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190846
  • Filename
    1484617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556392