Fabrication of high speed 1 micron FIPOS/CMOS

High Speed 1 micron FIPOS/CMOS devices, 100 stages inverter chains and 1/8 dynamic frequency divider, have been developed and successfully fabricated. The fabrication process and the speed performance are discussed in this report. A high pressure oxidation is advantageous for reducing the wafer warpage in FIPOS process and applicable to the fabrication process. DDD structure or SPD structure for NMOS, and the shallow junction formed by BF2Implantation for PMOS, are applied to fabrication of the 1 micron FIPOS/CMOS. The devices have a high speed performance, 60psec stage delay at Vdd=5 V and maximum operating frequency Fmax=1 GHz.