DocumentCode
3556396
Title
Device performances of a submicron SOI technology
Author
Herve, Auberton A J ; Joly, J.P. ; Jeuch, P. ; Gautier, J. ; Hode, J.M.
Author_Institution
LETI-IRDI - Commissariat à l´´Energie Atomique - LETI-CENG, Grenoble Cedex, France
Volume
30
fYear
1984
fDate
1984
Firstpage
808
Lastpage
811
Abstract
A fully CMOS bulk compatible technology has been performed on laser zone melting recrystallized silicon on insulator. Using a seeding technique submicron MOS transistors (L = 0.3 µm to 3 µm) have been processed in a grain boundary-free SOI layer, showing back leackage current < 0.2 pA/µm channel width. A 101 stages ring oscillator allows to measure propagation delay per stage of 93 ps for a supply voltage of 5V.
Keywords
Atom lasers; Atomic beams; Atomic layer deposition; CMOS technology; Circuit testing; Grain boundaries; Heating; MOSFETs; Ring lasers; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190850
Filename
1484621
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