Title :
Complementary p-MODFET and n-HB MESFET (Al,Ga)As FET´s
Author :
Kiehl, R.A. ; Gossard, A.C. ; Wiegmann, W. ; Ibbotson, D.E.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, New Jersey
Keywords :
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MESFETs; MODFET circuits; MODFET integrated circuits; Transconductance; Two dimensional hole gas;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190862
