DocumentCode
3556408
Title
Complementary p-MODFET and n-HB MESFET (Al,Ga)As FET´s
Author
Kiehl, R.A. ; Gossard, A.C. ; Wiegmann, W. ; Ibbotson, D.E.
Author_Institution
AT&T Bell Laboratories, Murray Hill, New Jersey
Volume
30
fYear
1984
fDate
1984
Firstpage
854
Lastpage
855
Keywords
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MESFETs; MODFET circuits; MODFET integrated circuits; Transconductance; Two dimensional hole gas;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190862
Filename
1484633
Link To Document