Title :
Ultra-shallow high concentration B profiles for VLSI
Author :
Carey, P.G. ; Sigmon, T.W. ; Press, R.L. ; Fahlen, T.S. ; Huneke, J.C. ; Crouch, R.
Author_Institution :
Stanford Electronics Labs, Stanford, California
Keywords :
Doping; Electrical resistance measurement; Electrons; Fabrication; Implants; Ion implantation; Rapid thermal processing; Silicon; Tail; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190865
