DocumentCode
3556411
Title
Ultra-shallow high concentration B profiles for VLSI
Author
Carey, P.G. ; Sigmon, T.W. ; Press, R.L. ; Fahlen, T.S. ; Huneke, J.C. ; Crouch, R.
Author_Institution
Stanford Electronics Labs, Stanford, California
Volume
30
fYear
1984
fDate
1984
Firstpage
859
Lastpage
859
Keywords
Doping; Electrical resistance measurement; Electrons; Fabrication; Implants; Ion implantation; Rapid thermal processing; Silicon; Tail; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190865
Filename
1484636
Link To Document