DocumentCode :
3556415
Title :
Modification of silicon electronic band structure using submicron period gate electrodes
Author :
Warren, A.C. ; Antoniadis, D.A. ; Smith, Henry I. ; Melngailis, J.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, Massachusetts
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
866
Lastpage :
867
Keywords :
Aluminum; Electrodes; Gratings; MOSFET circuits; Periodic structures; Silicon; Transconductance; Tungsten; Voltage; X-ray lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190869
Filename :
1484640
Link To Document :
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