DocumentCode

3556416

Title

A Si permeable base transistor by metal/Semiconductor hetero-epitaxy

Author

Ishibashi, Kouichirou ; Furukawa, Seijiro

Author_Institution

Tokyo Institute of Technology, Tokyo, Japan

Volume

30

fYear

1984

fDate

1984

Firstpage

868

Lastpage

870

Keywords

Etching; Oxidation; Scattering; Silicides; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1984 International

Type

conf

DOI

10.1109/IEDM.1984.190870

Filename

1484641