Title :
A Si permeable base transistor by metal/Semiconductor hetero-epitaxy
Author :
Ishibashi, Kouichirou ; Furukawa, Seijiro
Author_Institution :
Tokyo Institute of Technology, Tokyo, Japan
Keywords :
Etching; Oxidation; Scattering; Silicides; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190870
