DocumentCode
3556433
Title
Prospects of SST technology for high speed LSI
Author
Sakai, Tetsushi ; Konaka, Shinsuke ; Yamamoto, Yousuke ; Suzuki, Masao
Author_Institution
NTT Kanagawa, Japan
Volume
31
fYear
1985
fDate
1985
Firstpage
18
Lastpage
21
Abstract
SST has realized very high speed integrated circuits with a basic gate delay time of 25.8 ps/gate. Also, a 10.38 GHz frequency divider, a 0.85 ns 1 Kb RAM and a 6 ns 16×16 bit parallel multiplier are fabricated using SST with 1um optical lithography. For a scaled-down SST transistor, the basic gate delay time is expected to be less than 10 ps/gate.
Keywords
Delay effects; Etching; Frequency conversion; High speed optical techniques; Integrated circuit technology; Large scale integration; Lithography; Optical frequency conversion; Stimulated emission; Very high speed integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190880
Filename
1485430
Link To Document