Title :
Hot carrier effects in advanced self-aligned bipolar transistors
Author :
Petersen, S.A. ; Li, G.P.
Author_Institution :
University of Arizona, Tucson, Az.
Abstract :
This work describes a hot electron induced current gain degradation study in advanced self-aligned sidewall spacer NPN bipolar transistors. The effects of the extrinsic base drive-in thermal cycle on current gain degradation and intrinsic base link-up are discussed.
Keywords :
Avalanche breakdown; Bipolar transistors; Diodes; Electrons; Hot carrier effects; Hot carriers; Stimulated emission; Stress; Thermal degradation; Voltage;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.190881
