DocumentCode
3556434
Title
Hot carrier effects in advanced self-aligned bipolar transistors
Author
Petersen, S.A. ; Li, G.P.
Author_Institution
University of Arizona, Tucson, Az.
Volume
31
fYear
1985
fDate
1985
Firstpage
22
Lastpage
25
Abstract
This work describes a hot electron induced current gain degradation study in advanced self-aligned sidewall spacer NPN bipolar transistors. The effects of the extrinsic base drive-in thermal cycle on current gain degradation and intrinsic base link-up are discussed.
Keywords
Avalanche breakdown; Bipolar transistors; Diodes; Electrons; Hot carrier effects; Hot carriers; Stimulated emission; Stress; Thermal degradation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190881
Filename
1485431
Link To Document