Title :
Binding of quasi two-dimensional biexcitons
Author :
Birkedal, D. ; Singh, Jaskirat ; Lyssenko, V.G. ; Hvam, J.M.
Author_Institution :
Mikroelektronik Centret, Tech. Univ., Lyngby, Denmark
Abstract :
Summary form only given. In this presentation we report on a determination of the biexciton binding energies in GaAs-AlGaAs quantum wells of different widths and the results of a theoretical calculation of the ratio of the biexciton binding energy to that of the exciton. We determine the binding energies using spectrally resolved transient four-wave mixing (TFWM) and photoluminescence (PL).
Keywords :
III-V semiconductors; aluminium compounds; biexcitons; binding energy; gallium arsenide; high-speed optical techniques; multiwave mixing; photoluminescence; semiconductor quantum wells; GaAs-AlGaAs; GaAs-AlGaAs quantum wells; biexciton binding energies; biexciton binding energy; photoluminescence; quasi two-dimensional biexciton binding; spectrally resolved transient four-wave mixing; Dielectric constant; Excitons; Interference; Laser excitation; Laser modes; Laser tuning; Optical pulses; Resonance; Ultrafast optics; Wave functions;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
