DocumentCode
355644
Title
Binding of quasi two-dimensional biexcitons
Author
Birkedal, D. ; Singh, Jaskirat ; Lyssenko, V.G. ; Hvam, J.M.
Author_Institution
Mikroelektronik Centret, Tech. Univ., Lyngby, Denmark
fYear
1996
fDate
7-7 June 1996
Firstpage
218
Lastpage
219
Abstract
Summary form only given. In this presentation we report on a determination of the biexciton binding energies in GaAs-AlGaAs quantum wells of different widths and the results of a theoretical calculation of the ratio of the biexciton binding energy to that of the exciton. We determine the binding energies using spectrally resolved transient four-wave mixing (TFWM) and photoluminescence (PL).
Keywords
III-V semiconductors; aluminium compounds; biexcitons; binding energy; gallium arsenide; high-speed optical techniques; multiwave mixing; photoluminescence; semiconductor quantum wells; GaAs-AlGaAs; GaAs-AlGaAs quantum wells; biexciton binding energies; biexciton binding energy; photoluminescence; quasi two-dimensional biexciton binding; spectrally resolved transient four-wave mixing; Dielectric constant; Excitons; Interference; Laser excitation; Laser modes; Laser tuning; Optical pulses; Resonance; Ultrafast optics; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-444-0
Type
conf
Filename
865798
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