DocumentCode :
3556442
Title :
Characterization of Si/SiO2interface degradation due to hot-carrier injection
Author :
Sabnis, Anant G. ; Nelson, James T.
Author_Institution :
AT&T Bell Laboratories, Allentown, PA
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
52
Lastpage :
55
Abstract :
Short-channel length MOSFETs fabricated by various n-channel Si-gate technologies have been subjected to dc and pulse aging conditions. The degradation due to injection of hot-holes is found to be a self- limiting process, dictated by the dynamics of hole-trapping and their conversion to fast-states.
Keywords :
Aging; Capacitance; Capacitors; Degradation; Hot carrier injection; Hot carriers; Intrusion detection; MOSFETs; Plasma measurements; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.190889
Filename :
1485439
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556442
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