• DocumentCode
    3556442
  • Title

    Characterization of Si/SiO2interface degradation due to hot-carrier injection

  • Author

    Sabnis, Anant G. ; Nelson, James T.

  • Author_Institution
    AT&T Bell Laboratories, Allentown, PA
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    52
  • Lastpage
    55
  • Abstract
    Short-channel length MOSFETs fabricated by various n-channel Si-gate technologies have been subjected to dc and pulse aging conditions. The degradation due to injection of hot-holes is found to be a self- limiting process, dictated by the dynamics of hole-trapping and their conversion to fast-states.
  • Keywords
    Aging; Capacitance; Capacitors; Degradation; Hot carrier injection; Hot carriers; Intrusion detection; MOSFETs; Plasma measurements; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.190889
  • Filename
    1485439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556442