DocumentCode
3556443
Title
Experimental determination of hot-carrier energy distribution and minority carrier generation mechanism due to hot-carrier effects
Author
Toriumi, A. ; Yoshimi, M. ; Iwase, M. ; Taniguchi, K.
Author_Institution
Toshiba Corporation, Kawasaki, Japan
Volume
31
fYear
1985
fDate
1985
Firstpage
56
Lastpage
59
Abstract
Photon emission due to hot-carrier effect in MOSFETs is investigated in detail. Bias dependent photon intensity and its energy spectrum provide new findings about hot-carrier state in drain avalanche region. In particular, hot-carrier energy distribution is found to be a Maxwellian. The carrier temperature is evaluated from the energy spectrum experimentally, which is shown as a function of drain voltage. Minority carrier generation mechanism due to hot-carrier effect is discussed based upon photon mediated carrier generation model.
Keywords
Electrons; Energy measurement; Hot carrier effects; Hot carriers; MOSFETs; Photomultipliers; Pulse amplifiers; Temperature distribution; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190890
Filename
1485440
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