DocumentCode
3556446
Title
High frequency noise in fine line NMOS field effect transistors
Author
Jindal, R.P.
Author_Institution
AT&T Bell Laboratories, Murray Hill, New Jersey
Volume
31
fYear
1985
fDate
1985
Firstpage
68
Lastpage
71
Abstract
Noise mechanisms that limit the high frequency performance of submicron channel length NMOS FETs are presented. We develop here a physical understanding of the various noise mechanisms and evaluate the impact of device structure on them. This involves a review of some already published work and an examination of some new results.
Keywords
Conductivity; Doping; FETs; Frequency; Integrated circuit noise; MOS devices; MOSFETs; Noise generators; Noise reduction; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190893
Filename
1485443
Link To Document