Title :
High frequency noise in fine line NMOS field effect transistors
Author_Institution :
AT&T Bell Laboratories, Murray Hill, New Jersey
Abstract :
Noise mechanisms that limit the high frequency performance of submicron channel length NMOS FETs are presented. We develop here a physical understanding of the various noise mechanisms and evaluate the impact of device structure on them. This involves a review of some already published work and an examination of some new results.
Keywords :
Conductivity; Doping; FETs; Frequency; Integrated circuit noise; MOS devices; MOSFETs; Noise generators; Noise reduction; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.190893
