DocumentCode
355646
Title
Self-induced trapping of optical beams in semiconductors
Author
Chauvet, M. ; Hawkins, Scot A. ; Salamo, G.J. ; Segev, Mordechai ; Bliss, D.F. ; Bryant, G.
Author_Institution
Dept. of Phys., Arkansas Univ., Fayetteville, AR, USA
fYear
1996
fDate
7-7 June 1996
Firstpage
220
Abstract
Summary form only given. Spatial solitons in photorefractive materials have been a subject of recent interest. In this paper we report self-induced trapping in one dimension in the semi-insulating compound semiconductor InP:Fe. In particular, we observe that for milliwatt laser beams diffraction is exactly balanced by the photorefractively induced index change.
Keywords
III-V semiconductors; indium compounds; iron; laser beams; nonlinear optics; optical self-focusing; optical solitons; photorefractive materials; refractive index; InP:Fe; milliwatt laser beam diffraction; optical beams; photorefractive materials; photorefractively induced index change; self-induced trapping; semi-insulating compound semiconductor; semiconductors; spatial solitons; Charge carrier processes; Conducting materials; Diffraction; Laser beams; Optical beams; Photorefractive effect; Photorefractive materials; Semiconductor lasers; Solitons; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-444-0
Type
conf
Filename
865800
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