DocumentCode
3556470
Title
Variation of lateral doping - A new concept to avoid high voltage breakdown of planar junctions
Author
Stengl, R. ; Gosele, U.
Author_Institution
Siemens Research Laboratories, München
fYear
1985
fDate
1-4 Dec. 1985
Firstpage
154
Lastpage
157
Abstract
In this paper a new concept for high voltage planar junctions is presented. The necessary widening of the space charge region at the end of the junction is obtained by implantation through small openings in the oxide mask and subsequent drive-in, leading to a controlled smeared-out dopant distribution. Experimental results show the validity of the concept.
Keywords
Chemicals; Dielectric breakdown; Doping; Fabrication; Laboratories; Lead compounds; Peak to average power ratio; Space charge; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/IEDM.1985.190917
Filename
1485467
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