Improved dynamic properties of GTO-thyristors and diodes by proton implantation

Proton irradiation enables the production of recombination layers in silicon power devices. The defect spectrum after 3 MeV proton irradiation obtained by DLTS measurement indicates a favourable concentration ratio between divacancies and A centres, comparable to that after electron irradiation with energies > 10 MeV. Additionally, an n-doped layer formed by shallow donors (hydrogen containing. defects) is observed after ∼ 350°C annealing. Combined application of electron and proton irradiation in power diodes results in very soft recovery behaviour. Proton irradiation improves the turn-off behaviour of GTO-thyristors in comparison to electron irradiated devices.