DocumentCode
3556472
Title
Improved dynamic properties of GTO-thyristors and diodes by proton implantation
Author
Silber, D. ; Nowak, W.-D. ; Wondrak, W. ; Thomas, B. ; Berg, H.
Author_Institution
AEG Forschungsinstitut, Frankfurt, F. R. Germany
Volume
31
fYear
1985
fDate
1985
Firstpage
162
Lastpage
165
Abstract
Proton irradiation enables the production of recombination layers in silicon power devices. The defect spectrum after 3 MeV proton irradiation obtained by DLTS measurement indicates a favourable concentration ratio between divacancies and A centres, comparable to that after electron irradiation with energies > 10 MeV. Additionally, an n-doped layer formed by shallow donors (hydrogen containing. defects) is observed after ∼ 350°C annealing. Combined application of electron and proton irradiation in power diodes results in very soft recovery behaviour. Proton irradiation improves the turn-off behaviour of GTO-thyristors in comparison to electron irradiated devices.
Keywords
Annealing; Charge carrier lifetime; Diodes; Electrons; Energy measurement; Production; Protons; Silicon; Spontaneous emission; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190919
Filename
1485469
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