DocumentCode :
3556483
Title :
A trench MOSFET with surface source/drain contacts
Author :
Nakajima, Shigeru ; Miura, Kenji ; Somatani, Toshifumi ; Arai, Eisuke
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
200
Lastpage :
203
Abstract :
A trench MOSFET with surface source/drain contacts (T-MOS) has been newly proposed to increase the performance and density of future VLSIs. T-MOSs with trench depth of 0.8 um and 1.3 um are fabricated. Electrical characteristics of T-MOS are scarcely affected by the operation direction and trench depth. The threshold voltage of 0.45 V, the subthreshold swing of 90 mV/decade and the transconductance of 50 mS/mm are obtained for T-MOS with boron ion implantation dose of 
cm-2.
cm-2.Keywords :
Boron; CMOS technology; Contacts; Electric variables; Electrodes; Fabrication; Isolation technology; MOSFET circuits; Threshold voltage; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.190930
Filename :
1485480
Link To Document :
