• DocumentCode
    3556483
  • Title

    A trench MOSFET with surface source/drain contacts

  • Author

    Nakajima, Shigeru ; Miura, Kenji ; Somatani, Toshifumi ; Arai, Eisuke

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    200
  • Lastpage
    203
  • Abstract
    A trench MOSFET with surface source/drain contacts (T-MOS) has been newly proposed to increase the performance and density of future VLSIs. T-MOSs with trench depth of 0.8 um and 1.3 um are fabricated. Electrical characteristics of T-MOS are scarcely affected by the operation direction and trench depth. The threshold voltage of 0.45 V, the subthreshold swing of 90 mV/decade and the transconductance of 50 mS/mm are obtained for T-MOS with boron ion implantation dose of 4\\times10^{12} cm-2.
  • Keywords
    Boron; CMOS technology; Contacts; Electric variables; Electrodes; Fabrication; Isolation technology; MOSFET circuits; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.190930
  • Filename
    1485480
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556483