• DocumentCode
    3556487
  • Title

    A 600 ° C process for MOSFET fabrication using microwave plasma-stream gate oxidation

  • Author

    Warabisako, T. ; Kimura, S. ; Tokuyama, T.

  • Author_Institution
    Hitachi Ltd., Kokubunji, Japan
  • fYear
    1985
  • fDate
    1-4 Dec. 1985
  • Firstpage
    216
  • Lastpage
    219
  • Abstract
    Among the current Si LSI fabrication processes, gate oxidation is one which is hard to replace with any low temperature alternatives. A novel oxidation technique using microwave plasma-stream can provide a promising oxide film at reduced temperatures. Application of this technique to the gate oxidation of MOSFET´s together with the possibility of fabricating devices at as low as 600°C is discussed.
  • Keywords
    Diodes; Fabrication; MOSFET circuits; Oxidation; Plasma confinement; Plasma density; Plasma immersion ion implantation; Plasma temperature; Plasma waves; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.190934
  • Filename
    1485484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556487