DocumentCode
3556489
Title
Microwave annealing for low temperature VLSI processing
Author
Fukano, T. ; Ito, T. ; Ishikawa, H.
Author_Institution
Fujitsu Laboratories, Ltd., Atsugi, Japan
Volume
31
fYear
1985
fDate
1985
Firstpage
224
Lastpage
227
Abstract
The microwave annealing(MWA) has been found to effectively activate implanted dopants in silicon at a wafer temperature much lower than the melting point of aluminum (660 °C). The contact between aluminum and silicon can also be sintered producing a contact resistance as small as the value produced by the conventional furnace annealing. Characteristics of MOSFETs having a shallow junction fabricated with the MWA have shown possibility of low temperature processing for submicron VLSI devices.
Keywords
Aluminum; Annealing; Dielectric losses; Electromagnetic heating; Furnaces; MOSFETs; Silicon; Surface resistance; Temperature; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190936
Filename
1485486
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