Increase of resistance to hot carriers in thin oxide MOSFETS

Effects of gate oxide thickness on the hot electron induced degradation in LDD MOSFETs are studied. The device with thinner gate oxide causes less drain current reduction under the same bias stress condition in spite of its highersubstrate current. The relationship between the increase of parasitic drain resistance after stress test and gate oxide thickness shows square dependence. Then the model is proposed to explain that the amount of generated negative charge markedly decrease with decrease of the oxide thickness. And the maximum applicable supply voltage in 0.8µm CMOS with 15nm gate oxide thickness is presumed.