Title :
A submicron NMOS technology suitable for low power high speed circuits
Author :
Fichtner, W. ; Hofstatter, E.A. ; Watts, R.K. ; Bayruns, R.J. ; Bechtold, P.F. ; Johnston, R.L. ; Boulin, D.M.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
Abstract :
We have fabricated very high speed, low power devices and circuits using a submicron NMOS technology. Our results illustrate the electrical behavior of single minimum size devices, and present the performance of several submicron circuits, such as ring oscillators, a 3 GHz divide-by-two counter and a 90 MHz 16 × 16 multiplier.
Keywords :
Counting circuits; Degradation; Hot carriers; Implants; MOS devices; MOSFETs; Power dissipation; Power supplies; Ring oscillators; Voltage;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.190947
