• DocumentCode
    3556517
  • Title

    DC and microwave performance of In0.53Ga0.47As-In0.52Al0.48As single quantum well MISFETS

  • Author

    Seo, K.S. ; Nashimoto, Y. ; Bhattacharya, P.K. ; Gleason, K.R.

  • Author_Institution
    The University of Michigan, Ann Arbor, Michigan
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    321
  • Lastpage
    323
  • Abstract
    We have investigated the materials properties and device characteristics of a In0.53Ga0.47As MISFET grown by molecular beam epitaxy. This device has a semi-insulating In0.52Al0.48As layer to serve as the gate dielectric and can therefore be free of interface-related problems in conventional MISFETs using natural and grown oxides. Furthermore, the channel is formed by a 2-dimensional electron gas (2-DEG) in a quantum well. A d.c. transconductance of 130 mS/mm and unity gain cutoff frequency of 6.8 GHz were measured at room temperature in a 1.8 µm recessed-gate transistor.
  • Keywords
    Cutoff frequency; Dielectric devices; Dielectric measurements; Electrons; MISFETs; Material properties; Microwave devices; Molecular beam epitaxial growth; Temperature measurement; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.190963
  • Filename
    1485513
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556517