• DocumentCode
    3556534
  • Title

    Studies of thin poly Si oxides for E and E2PROM

  • Author

    Ono, Takashi ; Mori, Tadashi ; Ajioka, Tsuneo ; Takayashiki, Tetsuya

  • Author_Institution
    OKI Electric Industry Co., Ltd., Tokyo, Japan
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    380
  • Lastpage
    383
  • Abstract
    Electrical conductivity of thin poly Si oxides, 400-600A thick, has been investigated. Using an annealing prior to the oxidation, the relationship between electrical conductivity and the phosphorus concentration in the oxide has been estimated for the same poly Si asperity. The leakage current through the poly Si oxide increases with increasing phosphorus concentration in the oxide. The redistributed phosphorus concentration strongly depends on the oxidation conditions. This can be explained by segregation and transportation at the poly Si-SiO2interface.
  • Keywords
    Annealing; Conductivity; Electric variables measurement; Electronics industry; Industrial electronics; Industrial relations; Oxidation; Silicon; Temperature; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.190980
  • Filename
    1485530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556534