DocumentCode
3556535
Title
Properties of trench capacitors for high density DRAM applications
Author
Baglee, D.A. ; Doering, R.R. ; Elahy, M. ; Yashiro, M. ; Clark, D. ; Crank, S. ; Armstrong, G.
Author_Institution
Texas Instruments Inc., Houston, Texas
Volume
31
fYear
1985
fDate
1985
Firstpage
384
Lastpage
387
Abstract
Due to increasing levels of integration, it is expected that next generation DRAMs will make use of trench capacitors to minimize the area of a cell. In this paper we examine the properties of oxides grown in trenches and compare them with comparable oxides grown on planar surfaces. We also examine the effects of various cell to cell spacing on the trench to trench leakage. We conclude that despite the challenges of trench technology, it is excellent for use in 1Mbit and 4Mbit DRAMS.
Keywords
Capacitors; Circuits; DRAM chips; Etching; Fabrication; Instruments; Process design; Production; Random access memory; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190981
Filename
1485531
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