• DocumentCode
    3556539
  • Title

    Process and device considerations for micron and submicron CMOS technology

  • Author

    Parrillo, Louis C.

  • Author_Institution
    Motorola, Inc., Austin, Texas
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    398
  • Lastpage
    402
  • Abstract
    CMOS has emerged as the most important technology for VLSI, and soon VLSI, circuits. This paper will address some of the major technical issues and approaches used in designing state-of-the-art CMOS devices. These topics include the formation of the body for each type of device, the electrical isolation between the two types of devices, the active-device design, and latchup prevention techniques.
  • Keywords
    Boron; CMOS process; CMOS technology; Circuits; Doping; Implants; Isolation technology; MOS devices; Space charge; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.190985
  • Filename
    1485535