DocumentCode
3556539
Title
Process and device considerations for micron and submicron CMOS technology
Author
Parrillo, Louis C.
Author_Institution
Motorola, Inc., Austin, Texas
Volume
31
fYear
1985
fDate
1985
Firstpage
398
Lastpage
402
Abstract
CMOS has emerged as the most important technology for VLSI, and soon VLSI, circuits. This paper will address some of the major technical issues and approaches used in designing state-of-the-art CMOS devices. These topics include the formation of the body for each type of device, the electrical isolation between the two types of devices, the active-device design, and latchup prevention techniques.
Keywords
Boron; CMOS process; CMOS technology; Circuits; Doping; Implants; Isolation technology; MOS devices; Space charge; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190985
Filename
1485535
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