• DocumentCode
    3556541
  • Title

    Formation of 0.1 µm N+/P and P+/N junctions by doped silicide technology

  • Author

    Shone, F.C. ; Saraswat, K.C. ; Plummer, J.D.

  • Author_Institution
    Stanford University
  • fYear
    1985
  • fDate
    1-4 Dec. 1985
  • Firstpage
    407
  • Lastpage
    410
  • Abstract
    A new technique to form very shallow, low resistance, and high surface concentration junctions by diffusing the dopant from doped WSi2into the silicon has been developed. The junctions were formed by ion implanting WSi2films with As+, P+or B+which then acted as the diffusion sources. Subsequent high temperature processing simultaneously forms the junctions and ohmic contacts to the diffusion areas. N+/P and P+/N diodes with very shallow juctions have been formed by this doped silicide technology. Dopant diffusion in the WSi2and redistribution behavior in the SiO2/WSi2/Si structure with a wide range of implant doses, anneal temperatures and times have been characterized.
  • Keywords
    Annealing; Boron; Contact resistance; Implants; Semiconductor films; Silicides; Silicon; Surface resistance; Temperature; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.190987
  • Filename
    1485537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556541