Amorphous silicon bipolar transistor with high gain (& gt; 12) and high speed (& gt; 30 µ s)

An n⁺/i/p /i/n⁺amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30µS. This new structure of bipolar transistor has a very thin base (200A), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement. Variation from the fundamental structure is also been developed such as the Schottky emitter Al/i/p⁺/i/n⁺bipolar transistor.