Title :
The operational characteristics of a static induction transistor(SIT) image sensor
Author :
Yusa, A. ; Nishizawa, J. ; Imai, M. ; Yamada, H. ; Nakamura, J. ; Mizoguchi, T. ; Ohta, Y. ; Takayama, M.
Author_Institution :
Olympus Optical Co., Ltd., Tatsuno, Nagano, Japan
Abstract :
This paper describes a new type of solid state imaging device characterized by a high photo-sensitivity and a large output signal. The device consists of an array of static induction transistor (SIT) photosensors and MOS peripheral circuits. In order to apply the device to a standard TV format, we have developed a new SIT image sensor circuit configuration in which the SIT operates in a source follower circuit. An image sensor of 170(H)×124(V) pixels was fabricated by combining n-channel SIT and n-channel MOS process technology. Its operational characteristics were analyzed on a simplified model. The analysis confirmed our experimental results. A signal current as large as 94 µA was obtained at a saturation exposure value of 0.171x.s without an external amplifier.
Keywords :
Circuits; Image sensors; MOS capacitors; MOSFETs; Optical amplifiers; Optical imaging; Optical saturation; Optical sensors; Pixel; TV;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.190996
