• DocumentCode
    3556557
  • Title

    Planar InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition

  • Author

    Dupuis, R.D. ; Campbell, J.C. ; Velebir, J.R.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, New Jersey
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    465
  • Lastpage
    467
  • Abstract
    Planar InGaAs/InP heterostructure photodiodes have been fabricated from structures grown by atmospheric pressure metalorganic chemical vapor deposition. Diffused p-n junction devices of 75µm diameter have low dark currents (∼20nA at -10V), good quantum efficiencies of ∼50% (without AR coatings), and very high speed response (∼35ps).
  • Keywords
    Chemical vapor deposition; Dark current; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; P-n junctions; Photodiodes; Substrates; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.191003
  • Filename
    1485553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556557