• DocumentCode
    3556561
  • Title

    Characterization of GaAs integrated circuits by direct electro-optic sampling

  • Author

    Weingarten, K.J. ; Rodwell, M.J.W. ; Freeman, J.L. ; Diamond, S.K. ; Bloom, D.M.

  • Author_Institution
    Stanford University, Stanford, California
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    479
  • Lastpage
    482
  • Abstract
    With the recent demonstration of direct electro-optic sampling of GaAs circuits, a new method to characterize high-speed monolithic microwave and digital circuits exists. This technique uses picosecond pulses from a laser to non-invasively probe voltage waveforms at points internal to monolithic circuits with a measurement bandwidth in excess of 50 GHz. This paper presents measurements of a GaAs MESFET traveling wave amplifier and an 8-bit multiplexer/demultiplexer.
  • Keywords
    Digital circuits; Gallium arsenide; Lasers and electrooptics; Microwave circuits; Microwave theory and techniques; Optical pulses; Pulse amplifiers; Pulse circuits; Pulse measurements; Sampling methods;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.191007
  • Filename
    1485557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556561