DocumentCode :
3556561
Title :
Characterization of GaAs integrated circuits by direct electro-optic sampling
Author :
Weingarten, K.J. ; Rodwell, M.J.W. ; Freeman, J.L. ; Diamond, S.K. ; Bloom, D.M.
Author_Institution :
Stanford University, Stanford, California
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
479
Lastpage :
482
Abstract :
With the recent demonstration of direct electro-optic sampling of GaAs circuits, a new method to characterize high-speed monolithic microwave and digital circuits exists. This technique uses picosecond pulses from a laser to non-invasively probe voltage waveforms at points internal to monolithic circuits with a measurement bandwidth in excess of 50 GHz. This paper presents measurements of a GaAs MESFET traveling wave amplifier and an 8-bit multiplexer/demultiplexer.
Keywords :
Digital circuits; Gallium arsenide; Lasers and electrooptics; Microwave circuits; Microwave theory and techniques; Optical pulses; Pulse amplifiers; Pulse circuits; Pulse measurements; Sampling methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.191007
Filename :
1485557
Link To Document :
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