Transient substrate current generation and device degradation in CMOS circuits at 77K

The hot-carrier effects on CMOS device characteristics and circuit performance have been investigated at 77K under pulsed- stress conditions. A CMOS inverter was subjected to a pulsed input at 77K and resulting substrate current generation and device degradation have been characterized. The result shows that hot-carrier effects at 77K can be significant for CMOS devices having conventional source/drain structure under pulsed stress. The hot-carrier effects on CMOS circuit performance are also reported.