• DocumentCode
    3556596
  • Title

    Laser direct writing of metal interconnects

  • Author

    Cacouris, T. ; Krchnavek, Robert ; Gilgen, H.H. ; Osgood, R.M., Jr. ; Kulick, S. ; Schoen, J.

  • Author_Institution
    Columbia University, New York, NY
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    594
  • Lastpage
    597
  • Abstract
    Laser direct writing of metals offers the advantages of in-situ design and repair of IC´s with a process that can be controlled and altered from chip to chip to meet the designer´s needs. A summary of the laser direct writing techniques for metal deposition -- photolytic, pyrolytic, and photo-thermal is presented with an emphasis on the advantages of each technique based on recent results. In particular, we have sought to produce high-quality metal interconnects suitable for VLSI dimensions of 2-3um linewidths, yet with resistivities 3-5 times the bulk metal used. An important aspect of the study involved the penetrating of the native oxide layer that exists on evaporated Al metallizations in order to make low resistivity interconnect lines.
  • Keywords
    Aluminum oxide; Chemical lasers; Chemical vapor deposition; Conductivity; Etching; Gas lasers; Laser theory; Optical design; Substrates; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.191042
  • Filename
    1485592