DocumentCode
3556596
Title
Laser direct writing of metal interconnects
Author
Cacouris, T. ; Krchnavek, Robert ; Gilgen, H.H. ; Osgood, R.M., Jr. ; Kulick, S. ; Schoen, J.
Author_Institution
Columbia University, New York, NY
Volume
31
fYear
1985
fDate
1985
Firstpage
594
Lastpage
597
Abstract
Laser direct writing of metals offers the advantages of in-situ design and repair of IC´s with a process that can be controlled and altered from chip to chip to meet the designer´s needs. A summary of the laser direct writing techniques for metal deposition -- photolytic, pyrolytic, and photo-thermal is presented with an emphasis on the advantages of each technique based on recent results. In particular, we have sought to produce high-quality metal interconnects suitable for VLSI dimensions of 2-3um linewidths, yet with resistivities 3-5 times the bulk metal used. An important aspect of the study involved the penetrating of the native oxide layer that exists on evaporated Al metallizations in order to make low resistivity interconnect lines.
Keywords
Aluminum oxide; Chemical lasers; Chemical vapor deposition; Conductivity; Etching; Gas lasers; Laser theory; Optical design; Substrates; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.191042
Filename
1485592
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